1/2 medium power transistor (50v,0.5a) m e d i u m p o w e r t r a n s i s t o r ( 5 0 v , 0 . 5 a ) 2sc1741as 2 s c 1 7 4 1 a s data sheet 2011.06 - rev. b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 2 s c 1 7 4 1 a s dimensions (unit : mm) (1) emitter (2) collector (3) bace symbol v cbo v ceo v ebo i c p c tj tstg limits 50 50 5 0.5 0.3 150 - 55 to +150 unit v v v a w symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo h fe f t cob 50 50 5 - - 120 - - - - - - - - 250 6.5 - - - 0.5 0.5 390 - - v v v - mhz pf i c = 1ma v cb = 30v v eb = 4v v ce /i c = 3v/0.1a v ce = 5v , i e = - 20ma , f = 100mhz v cb = 10v , i e = 0a , f = 1mhz c c a i c = 100 a i e = 100 a a parameter transition frequency output capacitance v ce(sat) -- 0.4 vi c /i b = 150ma/15ma electrical characteristics (ta=25 c) parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector outoff current collector power dissipation junction temperature storage temperature absolute maximum rationgs (ta=25 c) packaging specifications and h fe type package h fe code basic ordering unit (pleces) 2sc1741as spt qr tp 5000 marking - features 1) high current.(i c =5a) 2) low saturation voltage, typically v ce(sat) =0.1v at i c / i b =150ma / 15ma. collector-base voltage collector-emitter voltage emitter-base voltage collector current emitter cutoff current dc current rransfer ratio collector-emitter saturation voltage spt (sc-72) (1) (2) (3) e l e c t r i c a l c h a r a c t e r i s t i c c u r v e s
m e d i u m p o w e r t r a n s i s t o r ( 5 0 v , 0 . 5 a ) 2 s c 1 7 4 1 a s 2/2 2011.06 - rev. b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet 2sc1741as 2 s c 1 7 4 1 a s electrical characteristic curves e l e c t r i c a l c h a r a c t e r i s t i c c u r v e s 20 10 5 2 1 0.5 0.2 0.1 0.2 0 0.4 0.8 0.6 1.2 1.0 50 100 200 base to voltage : v be (v) fig.1 ground emitter propagation characteristics collector current : i c (ma) v ce =6v 60 40 20 0 1 024 35 80 100 collector to emitter voltage : v ce (v) fig.2 ground emitter output characteristics collector current : i c (ma) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 i b =0ma 500 200 100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 collector current i c (ma) fig.3 dc current gain vs. collector current ( ) dc current gain h fe 1000 500 200 100 50 20 12 5 10 20 50 100 200 500 1000 collector current i c (ma) collector current i c (ma) fig.4 dc current gain vs. collector currnet ( ) dc current gain h fe v ce =10v - 25 c ta=75 c 25 c 50 20 10 5 0.1 0.2 0.5 12 510 20 collector to base voltage : v cb (v) emitter to base voltage : v eb (v) fig.7 input-and-output capacity vs.voltage characteristic collector output capacitance : cob (pf) emitter input capacitance : cib (pf) ta=25 c f=1mhz i e =0a 0.5 0.2 0.1 0.05 0.02 5 10 20 50 100 200 500 1000 collector current i c (ma) fig.6 collector-emitter saturation voltage vs. collector current i c /i b =10 - 25 c ta=75 c 25 c 0.5 0.2 0.1 0.05 0.02 5 10 20 50 100 200 500 fig.5 collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce (sat) (v) collector saturation voltage : v ce (sat) (v) emitter current : i e (ma) 500 200 100 - 1 - 2 - 5 - 10 - 20 - 50 fig.8 transition frequency vs.emitter current collector saturation voltage : v ce (sat) (v) ta=25 c cib cob ta=25 c ta=25 c ta=25 c i c /i b =100/1 50/1 20/1 10/1 ta = 100 c 25 c 25 c - 25 c - 25 c v ce =3v 1v v ce =6v
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